Abstract

In pulsed laser processing of synthetic diamond films it is an open question whether there exists temporarily a liquid phase of carbon under the influence of high temperature and pressure or not. Such a liquid phase would show an enhanced mobility of electrons and therefore a metal-like behavior. This would result in an increased reflectivity. We measured the time-resolved reflectivity of diamond films during pulsed laser irradiation at 193 nm and 1064 nm. At 193 nm significantly increased values for a period of typically 200 ns were found in the fluence range 15--60 J/${\mathrm{cm}}^{2}$. With irradiation at 1064 nm an evident increase was observed only in the fluence range of 23 J/${\mathrm{cm}}^{2}$. The same experiments were performed with silicon. In this case the melting under pulsed laser irradiation is well established. Silicon showed at both wavelengths a rise in reflectivity. By comparison, the existence of a thin metallic, liquid-carbon layer is deduced for irradiation of diamond films at 193 nm and, within a narrow fluence regime, also at 1064 nm. \textcopyright{} 1996 The American Physical Society.

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