Abstract
Propagation properties of reactive hydrogen atoms generated by catalysts at low pressure were investigated by thermal etching experiments. It was found that the propagation distance of reactive hydrogen atoms is prolonged when the reactor pressure is decreased. The catalysts are used in low pressure organometallic vapor‐phase epitaxy growth of using triethylarsine. It is shown that carbon contamination in a substrate can be considerably reduced by the catalysts in a wider region compared with the case of atmospheric pressure growth.
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