Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures

Kozlovski V V Kozlovski V V,Lebedev A A Lebedev A A,Levinshtein M E Levinshtein M E,Malevsky D A Malevsky D A,Oganesyan G A Oganesyan G A

doi:10.21883/sc.2023.01.55620.4475

Kozlovski V V Kozlovski V V, Lebedev A A Lebedev A A + Show 3 more

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https://doi.org/10.21883/sc.2023.01.55620.4475

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Abstract

The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for the first time in the operating temperature range Ti (23 and 175oC). The blocking voltage of the diodes under study, Ub, was 600 and 1700 V. For devices with U_b = 600 V, the fluence range was 5·1013-1·1014 cm-2; for devices with U_b=1700 V, the fluence range was 3·1013-6·1013 cm-2. An increase in the irradiation temperature leads to a noticeable decrease in the effect of irradiation on the current-voltage characteristics of the diodes. The effect of annealing on the current-voltage characteristics of irradiated devices is studied. Keywords: Silicon carbide, Schottky diodes, proton irradiation, current-voltage characteristics, annealing.

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