Abstract
n-ZnO nanowire/p-CuO film heterojunctions are fabricated on p-silicon (p-Si) substrate by chemical bath deposition (CBD) method. Samples are prepared by varying the nanowire growth time for 1.5 hr and 2.5 hr. A comparative study on the photovoltaic performance of the fabricated samples has been done and the device fabricated from 2.5 hr grown nanowires is observed to exhibit a significantly superior performance. For a power input of 0.037mW/cm2, the power conversion efficiency (ɳ) has been obtained to be 0.9% and 4.34% for the 1.5 hr and 2.5 hr growth time of the ZnO nanowires, respectively. © 2017 Elsevier Ltd. All rights reserved.Selection and/or Peer-review under responsibility of 2nd International Conference on Solar Energy Photovoltaic.
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