Abstract
We report the effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs. The process variables investigated include: i) implant anneal temperature and ambient; ii) oxidation procedure; iii) postoxidation annealing in nitric oxide (NO); iv) type of gate material, and v) high-temperature ohmic contact anneal. Electron mobility is significantly increased by a postoxidation anneal in NO, but other process variations investigated have only minor effects on the channel mobility. We also report the temperature dependence of electron mobility for NO and non-NO annealed n-channel MOSFETs.
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