Abstract
The effect of hydrostatic pressure on the energy distribution of surface states localized at the boundary between silicon (Si) and a lead borosilicate glass (PbO-SiO2-B2O3-Al2O3-Ta2O5) has been studied. At a pressure of 8 kbar, donor centers are formed in a layer of glass adjacent to the silicon-glass interface, which are capable of participating in electron exchange with the semiconductor.
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