Effect of pressure and temperature on spin-dependent tunneling in InAs/GaAs heterostructure with Dresselhaus spin-orbit interaction

Abstract

Abstract Using the transfer matrix, spin-dependent electron tunneling was studied in InAs/GaAs double barrier symmetrical heterostructure. The effect of Dresselhaus spin-orbit interaction in this system was analysed as a function of pressure and temperature. Both pressure and temperature influences the polarization efficiency, barrier transparency and dwell time of electrons. The increasing pressure increases polarization efficiency, tunneling life time and dwell time of electrons, where as the increasing temperature decreases the same parameters. The results might be helpful for the fabrication of spin-devices.