Abstract
The effect of ‘Al’ concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reported for the first time in the case of InAs/Ga1−y Al y As heterostructures for various ‘Al’ concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barrier semiconductor even without any external field.
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