Effect of precursors’ ratio on c -axis-oriented SmBCO film by MOCVD

Abstract

Abstract Highly c -axis-oriented SmBa 2 Cu 3 O 7−x (SmBCO) epitaxial films were deposited on (100)-LaAlO 3 (LAO) single crystal substrates by metal-organic chemical vapor deposition using Sm(dpm) 3 , Ba(dmp) 2 /Ba(tmod) 2 and Cu(dpm) 2 as precursors. The effect of the precursors’ ratio on the crystalline phases, composition and microstructure of films were investigated. The highly c -axis-oriented SmBCO films with stoichiometry were obtained at the precursors’ molar ratio at Sm: Ba: Cu = 1: 5.12–5.54: 2.16–2.82, with the in-plane epitaxial orientation relationship of SmBCO[100] // LAO[010] and SmBCO[010] // LAO[001].