Abstract
Data are presented on the effect of long-term high-temperature heat treatment (750°C, 200 h; 950°C, 50 h; and 1050°C, 50 h) preceding Au diffusion on the acceptor behavior of Au in n-type Czochralski silicon. Detailed studies of Au diffusion reveal that the impurity gettering process depends strongly on the heat treatment conditions. The results are interpreted in terms of oxygen precipitation in Si.
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