Abstract
Data are presented on the electrical activity of Au in Czochralski Si heat-treated and diffusion-doped under various conditions. The results are interpreted in terms of force fields responsible for changes in the concentration of electrically active centers. Long-term heat treatment between 700 and 1050°C is shown to have a significant effect on the acceptor behavior of Au in diffusion-doped Si. The concentration of Au acceptors is sensitive to the surface condition in the course of heat treatment: a tungsten coating increases the Au concentration in the bulk of diffusion-doped Si.
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