Year-end Sale % OFF 
Abstract
The effect of pre-Co-deposition Ni ion implantation on the stress level of CoSi2 film formed by deposition of Co films on Si(100) substrates and subsequent ex situ rapid thermal annealing was investigated. X-ray diffraction was employed to measure the tensile stress in the CoSi2 films. It was found that the pre-Co-deposition Ni ion implantation was effective in reducing the stress level of CoSi2 films and the stress decreased linearly with the increase of reserved Ni ion implantation dose. In the present study, reduced lattice mismatch was proposed to explain the reduction of internal stress in CoSi2 films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
