Reduction of the tensile stress in CoSi 2 films by pre-deposition carbon ion implantation

Abstract

The tensile stress in CoSi 2 films formed by deposition of Co films on Si(1 0 0) substrates and subsequent ex situ rapid thermal annealing was reduced by implantation of carbon ions into Si substrates before the deposition of Co films. It was found that the stress in the CoSi 2 films decreases linearly with the increase of the C + implantation doses. The reason for the reduction in the tensile stress is explained in terms of a new mechanism on the origin of the intrinsic stress in thin solid films based on a refined Thomas–Fermi–Dirac model. The theoretical calculations according to this model agree quite well with the experimental results.