Abstract
A four-point probe method is used to study the effect of a 10 min anneal in N2 at 600 °C on the resistivity of B-doped chemical vapor deposited diamond samples as a function of doping and film quality, as determined by Raman spectroscopy. Measurements on diamond films deposited on oxidized Si having resistivities in the ranges of 0.27–535 Ω cm, show that the increase of resistivity after the anneal is more prominent for films with low doping and high quality. There seems to be a doping level above which the effect of anneal is not observable. the dependence of the effect of anneal on the doping level and diamond quality is reported.
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