Abstract
We have investigated the passivation performance of atomic layer deposited silicon dioxide (ALD-SiO2) films on crystalline silicon surface with various post-annealing temperatures. A maximum effective lifetime of 2157 μs can be achieved at the optimized annealing temperature of 650 °C on 3 Ω cm n-type silicon wafers. The improved passivation quality can be attributed to the low interface defect density and extremely high positive fixed charge density. Especially, the high positive fixed charge density of over 4 × 1012 cm-2 can be observed after annealing at high temperature. Therefore, it is inferred that the passivation mechanism for ALD-SiO2 films is based on not only chemical passivation but also field-effect passivation, which is more similar with the ALD-Al2O3 films rather than the thermally grown SiO2 films. X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and thermal effusion measurement revealed the variation of elements content and distribution of silicon, oxygen, hydrogen and carbon during the post-deposition thermal treatment process, indicating that the rearrangement and release of these elements create more oxygen vacancies and result in the improvement of interface quality and positive fixed charge density of ALD-SiO2 films.
Published Version
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