Abstract
The effect of post-chemical–mechanical polishing (CMP) surface treatments on the interfacial adhesion energies between electroplated Cu thin film and SiNx capping layer was evaluated using a four-point bending test. The polished Cu surface was treated by one of three methods: no surface treatment, cleaning by plasma with a vacuum break, and cleaning by the wet chemical method. X-ray photoemission spectroscopy (XPS) analysis on the delaminated interfaces, cross-sectional high-resolution transmission electron microscopy (HR-TEM), and also the electron energy loss spectroscopy (EELS) analysis were performed on the interfaces. The interfacial adhesion energy increases with post-CMP cleaning, which is strongly influenced by the effective removal of residual oxygen at the Cu surfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
