Abstract
This paper work presents the effect of post annealing treatment on electrical and structural properties of nanostructured Zinc Oxide (ZnO) which was fabricated by hydrothermal process. I-V measurement shown the nanostructured ZnO exhibit Schottky conductive mechanism. The resistance of nanostructured ZnO was reduced as respected to the annealing temperature. XRD and EDX analysis confirmed the presence of ZnO element of Si substrate. Finally, FESEM analysis indicated a small nanoparticle growth on Si surface have 28.64 nm of average diameter size. These experiment results revealed, annealing treatment might be used to assist the formation of nanostructured ZnO on bare substrate.
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