Abstract

Zinc oxide (ZnO) nanostructures were grown on sol-gel spin-coated ZnO seed layers by using the hydrothermal method. The seed layers were post-heated at various temperatures ranging from 350 to 500 °C. The effects of the post-heat-treatment temperature for the seed layers on the structural and the optical properties of the ZnO nanostructures were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The seed layers postheated at temperatures above 450 °C exhibited mountain-chain-like structures with voids while the surfaces of the ones post-heated at relatively lower temperatures showed a smooth morphology with high density. The full width at half maximum (FWHM) of the ZnO (002) diffraction peak of the seed layers decreased with increasing post-heat temperature, which indicates that the crystal quality of the seed layers was enhanced as the post-heat temperature was increased. The uniformity and the density of the ZnO nanostructures were affected by the uniformity and the morphology of the seed layers. In addition, the highest c-axis preferred orientation, the narrowest FWHM of the ZnO (002) diffraction peak, and the largest average grain size were shown in the ZnO nanostructures grown on the seed layers post-heated at a temperature of 400 °C. Moreover, the intensity of the deep-level emission peak in the PL spectra increased with increasing post-heat temperature.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.