Abstract
Using optical absorption and Auger spectrometry techniques, we studied the effect of rapid thermal annealing (RTA) on the properties of erbium oxide films deposited onto a porous silicon carbide buffer layer formed on 4H-SiC substrates. An analysis of atomic composition of the films under investigation as a function of RTA duration was performed. It is shown that phase composition of erbium oxide films on silicon carbide substrates with a porous SiC layer can be changed by varying RTA duration.
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