Effect of polysilicon depletion effect on seriesresistance and transconductance of MOS transistors at 4.2 K

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Experimental results of the effect of the polysilicon depletion effect on 0.5 µm MOS transistors, operated at 4.2 K, are shown here. These results serve to shed light on the interplay of series resistance, freeze-out, and field-induced charge ionisation effects on the characterisation and modelling of sub-micrometre MOSFETs operated at 4.2 K.