Abstract
InxGa1-x N/GaN blue LEDs faces significant efficiency droop issue. The causes of efficiency droop are Shockley Read Hall recombination (SRH), Auger recombination (AR), carrier delocalization and electron leakage. The SRH, Auger and electron leakage are functions of carrier concentration and temperature. InGaN/GaN superlattice has polarization electric field at interface. In this work we explore effect of polarization electric field on efficiency droop. It is shown that polarization field enhances Auger coefficient resulting in more droop in internal quantum efficiency of blue LED. Thus, for improvement in efficiency, polarization field required to be minimized which requires growth of the material in m-plane instead of c-plane.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
