Abstract
AlxGa1-x N/GaN deep ultraviolet LEDs faces significant efficiency droop issue. The factors responsible for the efficiency droop are Shockley Read Hall recombination (SRH), Auger recombination (AR), electron delocalization and electron leakage. The SRH, Auger and electron leakage are functions of carrier concentration and temperature. AlGaN/GaN heterostructure has polarization electric field at interface. In this work we investigate effect of polarization electric field on efficiency droop. It is shown that polarization field enhances Auger coefficient resulting in more droop in efficiency of LED. Thus, for improvement in efficiency polarization field required to be minimized.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
