Abstract
The factors that affect the trench width and aspect ratio in electron-cyclotron resonance (ECR) etched HgCdTe and CdTe are investigated. The ECR etch bias and anisotropy are found to be predominately determined by the photoresist feature-erosion rate. The physical characteristics of the trenches are attributed to ECR plasma-etch chemistry. A method for fabricating high aspect-ratio, HgCdTe isolation trenches is demonstrated through a combination of advanced photolithography and ECR etching.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
