Abstract
We report a large transition temperature (TC) decrease in a VO2 thin film device under photo-irradiation. With the increasing photo-irradiation intensity (PIntensity) with a wavelength of 405 nm, the TC of the VO2 device decreased at a rate of ∼3.2×10−2°CW/cm2 and reached as low as 40.0 °C at a PIntensity of 8.4×102 W/cm2. While the change in TC is primarily due to the photothermal effect when the PIntensity is below 3.6×102 W/cm2, both the photothermal and photo-induced carrier density effects contribute to the change in TC when the PIntensity is above 6.4×102 W/cm2.
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