Abstract
Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modifies the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of different surface facets. Three distinct island shapes occur, but the island types and their sequence of formation differ from those found with undoped Ge islands. The addition of phosphorus decreases the size of the multifaceted “domes”—the island shape that has a favored island size, providing an additional method for controlling the islands. The largest islands have a steep pyramidal structure not seen for undoped islands.
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