Abstract
Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modifies the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of different surface facets. Three distinct island shapes occur, but the island types and their sequence of formation differ from those found with undoped Ge islands. The addition of phosphorus decreases the size of the multifaceted “domes”—the island shape that has a favored island size, providing an additional method for controlling the islands. The largest islands have a steep pyramidal structure not seen for undoped islands.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.