Abstract
This study explores the effect of pH and abrasive concentration on the chemical mechanical polishing of blank Ge2Sb2Te5 (GST) film using the colloidal silica-based slurry. High polishing rates were observed at low pH values and material removal rate (MRR) appears as a linear function of abrasive concentration. To better understand the effect of abrasive concentration on the material removal, MRR per abrasive particle was calculated and on-line coefficient of friction (COF) test was also conducted. Experimental results show that MRR per particle decreases along with abrasive concentration and COF increases linearly according to the abrasive concentration, which indicates that polishing efficiency per particles decreases linearly and MRR is strong related to COF respectively, during the CMP process.
Published Version
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