Abstract
This article uses methylammonium lead iodide (MAPbI3) perovskite HTL material to increase the performance of the basic (ZnMgO/CIGSSe) solar device. First, the CdS-free basic experimental photovoltaic (PV) device with a 20% efficiency is simulated here. The experimental optoelectronics data is entered into modelling simulator to validate the PV results. Furthermore, the efficiency of basic solar cell device is improved by altering the cell size and doping density of the front, buffer, and absorber layers. Although efficiency (η), VOC, FF, and JSC have improved after optimization, external quantum efficiency (EQE) remains lower than that of basic PV devices due to the absence of HTL material. To further enhance an efficiency of PV cell, a different structure is proposed to use MAPbI3 as a HTL material among the CIGSSe and Mo layers. As a result, the suggested PV device takes in most of the blue sunlight, rapidly decreasing the recombination fatalities and increasing the η = 27.96% and EQE.
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