Abstract
Zinc Oxide (ZnO) films were deposited by Atomic Layer Deposition (ALD) using Diethylzinc and a combination of Water and Ozone as the precursores. Electrical conductivity of ALD grown ZnO films, under low field, were studied with varied partial pressure of the constituent reactants. Supressing the oxygen vacancy by introducing O3 during the reaction increase the resistivity of the films by couple of orders of magnitude. UV-Vis spectroscopy measurement showed the films to be transparent giving a room for its application as a TCO in solar cell.
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