Effect of Parasitic Capacitance on DG-HGTFET and Its Influence on Device RF Performance

Abstract

In this paper, for the first time, the design of double-gate hetero-gate-dielectric tunnel field effect transistor (DG-HGTFET) for asymmetric drain doping for RF (Radio frequency) application is discussed. The impact of drain parasitic capacitance on the device performance is analyzed. The results indicate that parasitic capacitances are dominating factor which will degrade the RF characteristics. For this, the RF figures of merit for DG-HGTFET are analyzed in terms of unit-gain cut-off frequency (f T ), maximum frequency of oscillation (f max ). Further, asymmetric drain doping is also analyzed for suppressing the ambipolar behavior.