Abstract
We studied the effect of P+ region design on the simulation and fabrication of 6500 V 4H-SiC JBS diodes. There existed a deviation of 0.9 μm in P+ region design between theoretical simulation and actual device during the fabrication. We mainly attributed this change of P+ region design to the implantation spreading and the mask etching processes. The simulation fitted well with the measured results considering the broadening of 0.9 μm of P+ region. According to the analysis, we calibrated the simulation and successfully fabricated the 6500 V/40A 4H-SiC JBS diodes. The simulation fitted very well with the performance of fabricated device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
