Abstract
Two types of 650-V/50-A 4H-SiC JBS diodes with various cell pitch are fabricated. A novel method based on Green’s function theory and convolution to calculate the temperature distribution of the JBS diodes is proposed in this work. The calculation results show that the power dissipation distribution has a significant influence on thermal characteristics of JBS diodes. Therefore, the structure design or layout optimization should be considered carefully in early device design. The infrared imaging tests are conducted to confirm the actual temperature behavior. The experimental results match well with the calculation results.
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