Effect of P addition on the thermal stability and electrical characteristics of NiSi films

Abstract

Immersion Ni–P deposition is undoubtedly one of the most important catalytic deposition process, due to its simplicity in operation and low equipment cost. In this study, immersion deposited Ni–P films were used to form Ni-silicide films. Ni–P films with a thickness of 100nm were fabricated by immersing Si(100) substrates in an aqueous deposition solution. Ni-silicide films were then formed by annealing the samples in a furnace at temperatures ranging from 400°C to 900°C for 1h in an argon ambient. Experimental results indicate that a phosphor addition in Ni films increased the transformation temperature of NiSi to NiSi2 to 900°C. Moreover, the feasibility of enhancing the thermal stability of NiSi by varying the interface energy at the NiSi2/Si interface and the surface energy of a Ni–P–Si capping layer on the NiSi surface is discussed.