Abstract
Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.
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