Abstract
The effect of oxygen potential on the wetting behavior and interfacial energy between Cu and sapphire was studied using the sessile drop technique in a CO‐CO2 atmosphere. A linear relation was found between γSL and logpO2 (atm) from 10−16 to 10−5. Beyond 10−5 atm γSL approached a constant value asymptotically. A barrier surface layer was proposed to explain this change. The Gibbs adsorption equation was used to evaluate the characteristics of the interfaces. Formation of a Cu2O film at the liquid‐vapor interface and a CuAlO2 film at the solid‐liquid interface is suggested. The work of adhesion reached a maximum at ∼ 0.01 at.% oxygen, corresponding to pO2∼ 10−9atm. Measurements of the basal radius as a function of oxygen content were used to evaluate the role of oxygen in promoting spreading. Spreading on sapphire is directly proportional to the logarithm of oxygen present in the molten Cu drops.
Published Version
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