Abstract
Effect of oxygen in an atmosphere on 〈100〉 texture formed by laser melting has been quantitatively examined using x-ray diffraction method. It has been found that oxygen content over several percentage is necessary to be included in an atmosphere during recrystallization for preventing the agglomeration of silicon and achieving strong 〈100〉 texture, but that capping with an SiO2 layer does not induce such strong 〈100〉 texture as that produced with air and no capping. An oxide layer seems not to be necessarily important for strong 〈100〉 texture formation.
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