Abstract
Semiconductive carbon fibers suitable for infrared‐ray sensor materials were prepared by final heat treatments at 600°‐700°C in an atmosphere with a controlled oxygen‐gas (O2) concentration, and the influence of O2 concentration on the electrical properties and surface composition/micro ‐ structure was investigated. Resistivities at 20°C were almost equal and independent of the O2 concentration of heat treatment in all cases, but the thermistor constant decreased as the O2 concentration increased. Carbon fibers heat‐treated in O2‐mixed nitrogen gas (N2) exhibited higher surface oxygen concentrations than did those treated in pure N2, and surface microstructures differed between the two fibers.
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