Abstract
Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3−d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.
Highlights
Resistance switching (RS) has been observed in metal/resistance switching (RS) layer/metal structures, in which the resistance can be switched reversibly between a high resistance state (HRS) and a low resistance state (LRS) depending on the applied voltage[1,2,3]
The main peak at 529.2 ± 0.1 eV is attributed to oxygen in a-YFCO, such as Fe-O, Cr-O and Y-O, which is strongly associated with oxygen-deficiencies, and the peak at 530.8 ± 0.2 eV should be attributed to surface oxygen that is chemisorbed or bound electrostatically on the surface of YFCO41–45
We have prepared a series of a-YFCO films under various oxygen pressures using pulsed laser deposition
Summary
Resistance switching (RS) has been observed in metal/RS layer/metal structures, in which the resistance can be switched reversibly between a high resistance state (HRS) and a low resistance state (LRS) depending on the applied voltage[1,2,3]. Li et al reported a direct observation of the dynamic process of VOs migration in CeO2 film driven by electric field[31] Both of these previous investigations clearly indicate that VOs are uniformly distributed in the RS layer, and a large amount of VOs in oxide film themselves merely serves as a VOs reservoir, that is, the performance of RS is strongly affected by the concentrations of VOs. More recently, large RS ratio and long retention could be achieved in amorphous-film-based ReRAM devices, and suggested that it is very attractive for future applications of nonvolatile ReRAM devices[32,33,34]. The amorphous YFCO film with high crystallization temperature should beneficial to the fabrication of the RS devices. The enhanced RS and long retention suggest its great potential for applications in nonvolatile memory devices
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
