Abstract
AbstractThe effect of oxygen content during sputtering on the leakage mechanism and the ferroelectric properties of BiFeO3 with a sintering aid of CuO (CuO‐BFO) was investigated, where all thin films with (100) orientation were grown on SrRuO3/LaAlO3(100) substrates by radio frequency sputtering with an oxygen content of 0–40%. The ferroelectric properties in CuO‐BFO are tailored by changing the oxygen content during sputtering, indicating a small growth window. The Schottky emission dominates the leakage behavior regardless of oxygen content. The thin film with an oxygen content of ∼20% during sputtering has a higher remanent polarization of 2Pr ∼ 184.7 μC/cm2, due to its lower leakage current density and an improved phase purity. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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