Abstract
The photoluminescence of transpartent and conductive CdIn 2O 4 thin films formed by rf sputtering has been investigated as a function of oxygen concentration. The photoluminescence peaks show a “red shift” as the oxygen concentration is increased. This is due to the Burstein-Moss effect in conductive degenerate oxide semiconductors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
