Abstract
The trans-barrier d.c. conductivity and the I–V characteristics of several grain boundaries (GBs) of polycrystalline silicon samples were determined in order to find possible correlations between the configuration of the impurity cloud at GBs and their electrical activity. It has been found that, in good agreement with the predictions, the segregation features of oxygen and carbon at GBs determine uniquely the height of the potential barriers set up in their correspondence.
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