Abstract
Al-doped ZnO (ZnO:Al) thin films were grown epitaxially on r-plane sapphire substrate by pulsed laser deposition. Substrate temperature of 400°C and pulsed repetition rate of 5Hz was kept constant during the deposition. The effect of oxygen ambient pressure from 0.1 to 10mTorr on structural, optical and electrical properties of the ZnO:Al films were investigated. The lowest resistivity was found to be 2.14×10−3Ω-cm with a carrier concentration of 6.89×1019cm−3 for the film deposited in 1mTorr of oxygen pressure. ZnO:Al film revealed smoother surface obtained at oxygen ambient pressure of 1mTorr. The epitaxial relationship between ZnO:Al films and r-plane sapphire was found to be (0001)ZnO//(011¯2)sappand[101¯0]ZnO//[01¯11]sapp. Photoluminescence spectra of the film grown at the oxygen ambient pressure of 1mTorr exhibited peak at 3.34eV, without any deep level.
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