Abstract
AbstractThin films of hafnium oxide were deposited on silicon substrates using tetrakis-diethylamino hafnium as precursor. Two different oxidizers: (a) ozone/oxygen mixture, and (b) dry oxygen were used for comparative study of the effect of different oxidizers on the deposited films. The deposition using dry oxygen was carried out in a cold-wall rapid thermal processing metalorganic chemical vapor deposition (MOCVD) reactor, whereas ozone/oxygen mixture was used in a cold-wall atomic layer deposition (ALD) reactor. Annealing studies were carried out at 600 and 800°C in high-purity argon at atmospheric pressure. X-ray photoelectron spectroscopy (XPS) analyses of as-deposited and annealed films were performed to study the HfO2/Si interface. The films deposited using these two different oxidizers appeared to be of comparable quality. Silicon oxide formation at the interface occurred after annealing at 600°C and it increased upon further annealing at 800 °C.
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