Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers

Abstract

The effect of oxide precipitate size on slip generation was investigated in Czochralski (CZ), p/p-, p/p+ and p/p++ epitaxial wafers during device manufacturing. In high-temperature processes where maximum temperature reaches 1100°C, the mechanical strength of epitaxial wafers was far superior to that of CZ wafers. In contrast, the mechanical strength of all wafers was sufficiently maintained in low-temperature processes where maximum temperature reaches 1050°C. The slip dislocation generation can be explained according to the size of oxide precipitate formed in each wafer; precipitates larger than approximately 200 nm can generate slip dislocations.