Abstract
In this work, we investigate the electrical properties of oxide layer in the metal-oxide semiconductor field effect transistor (MOSFET). The thickness of oxide layer is proportional to square root of oxidation time. The feature of oxide layer thickness on the growth time is consistent with the Deal-Grove model effect. From the current-voltage measurement, it is found that the threshold voltages (Vt) for MOSFETs with different oxide layer thicknesses are proportional to the square root of the gate-source voltages (Vgs). It is also noted that threshold voltage of MOSFET increases with the thickness of oxide layer. It indicates that the bulk effect of oxide dominates in this MOSFET structure.
Highlights
After the discovery of metal-oxide semiconductor field effect transistor (MOSFET), the oxide layer was an important electrical insulator in the metal-oxide-semiconductor system
We present the oxide layer effect of MOS systems which were fabricated at the low pressure grown by rapid thermal chemical vapor deposition (RTCVD)
The thickness of oxide layer is proportional to square root of oxidation time indicating that the growth of oxide is in the mass transfer limited regime as predicted by Deal-Grove model
Summary
After the discovery of MOSFET, the oxide layer was an important electrical insulator in the metal-oxide-semiconductor system. Reducing the oxide layer thickness will lead to problems of tunneling leakage current through the source/drain and substrate. The gate oxide leakage is observed in MOSFET systems. This can be attributed to tunneling assisted by the traps in the interface between oxides and semiconductor.[3,4,5] In this defect situation, it depicts the relationship between the threshold voltage and the gate oxide thickness of MOSFET. The relationship between square of threshold voltage and the gate-source voltage approaches a very strong linear dependence. It indicates a strong effect of gate leakage in the MOS systems
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
