Abstract
The effect of oxidation due to ultraviolet (UV) irradiation in air on diamond thin film synthesized by hot-filament chemical vapor deposition (CVD) has been investigated. A low-pressure mercury lamp is used as the UV light source. With UV irradiation, removal of graphite contained in the film begins at a temperature of 350° C due to the oxidation. This temperature is 250° C lower than that reported to yield the same effect without UV irradiation. UV irradiation enables the selective removal of graphite while maintaining the idiomorphic structure of diamond. It is clarified that direct UV irradiation on the film is critical in this process.
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