Abstract
Abstract We studied the role of organic semiconductor spacer tris (8-hydroxyquinoline) ( Alq 3 ) in a hybrid spin valve which is comprised of V [ TCNE ] x (x ∼ 2, TCNE: tetracyanoethylene) and Fe as the ferromagnetic layers. We compare two types of devices: Fe/ V [ TCNE ] x /Al and Fe/ Alq 3 / V [ TCNE ] x /Al, showing that organic spacer is not indispensable for the appearance of the spin valve effect. However, the device with Alq 3 spacer has magnetoresistance (MR) value one order of magnitude larger than the device without spacer. The MR of both devices diminish with increasing temperature, while only the Fe/ Alq 3 / V [ TCNE ] x /Al device shows room-temperature MR.
Published Version
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