Abstract
Diamond nucleation and heteroepitaxial diamond film growth on Si (1000) were studied by scanning electron microscopy find Raman spectra. The diamond nucleation process was performed by electron emission using hot filament chemical vapor deposition. The nucleation density was found to be up to 10 11 cm -2 . Highly oriented epitaxial growth of diamond by this method was achieved on mirror-polished silicon substrate. Experimental results showed that the nucleation rate has a significant effect on heteroepitaxial diamond films on virgin silicon surface. Low and high nucleation rates led to some discrete big diamond crystals and polycrystalline diamond films, whereas, with an appropriate nucleation rate, the epitaxial growth of diamond on an untreated silicon substrate can be accomplished.
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