Abstract
AbstractThe scattering rates of the free electrons in a semiconductor depend upon the energy band structure of the material. No semiconductor possesses a parabolic energy band. The acoustic scattering rate of the free electrons for a non‐parabolic and band is well known for the high lattice temperatures when the scattering is effectively elastic. But when the lattice temperature is quite low ( <20 K) the scattering process becomes inelastic. The effect of the band non‐parabolicity on the acoustic and the piezoelectric scattering rates of the free electrons is investigated here under the condition when the lattice temperature is low. The same effect on the piezoelectric scattering rates at high lattice temperatures is also obtained here. Numerical calculations are carried out at different lattice temperatures for Si which has a low value for the non‐parabolicity factor and for InSb which has quite a high value for the same factor. The results are interesting and prompt one to take up further investigation.
Published Version
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