Abstract

ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO2/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO2 film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO2 film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO2 film. In addition, the Al/ZrO2/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.

Highlights

  • A novel memory device, resistive switching memory, has been extensively studied due to its great potential of low operation voltage, low power consumption, high operation speed, nonvolatility, and simple structure [1,2,3,4,5,6,7,8]

  • The Al/ZrO2/ Pt device proposed in this study is possible for application in flexible electronic equipment because it can be fully fabricated at room temperature (RT)

  • The Al/ZrO2/Pt resistive switching memory was successfully fabricated at RT

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Summary

Introduction

A novel memory device, resistive switching memory, has been extensively studied due to its great potential of low operation voltage, low power consumption, high operation speed, nonvolatility, and simple structure [1,2,3,4,5,6,7,8]. The bipolar resistive switching indicates that the memory states of the device are altered by applying bias voltages with different polarities (curves 1 and 2).

Results
Conclusion

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