Abstract
Nitrogen-doped amorphous carbon thin films have been prepared by thermal chemical vapor deposition (CVD) technique at different temperature. The preparation involved argon, camphor and nitrogen as carrier gas, carbon source and dopant respectively. The effects of nitrogen incorporation in the amorphous carbon thin film on electrical and optical properties was characterized by using Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and UV-VIS-NIR spectroscopy. The current-voltage (I-V) measurement studies demonstrate that the conductivity increased along the deposition temperature. There are also significant changes in conductivity and optical band gap for doped and undoped thin films.
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